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US 2012/0070956 A1Published application
Method for Manufacturing Memory Element
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorTakaaki Nagata
Life of this patent
Estimating the term…
Abstract
A conductive paste including conductive particles each of which has a size of greater than or equal to 0.1 μm and less than or equal to 10 μm, a resin, and a solvent is placed over a first conductor and the solvent is vaporized. In this manner, a second conductor having the conductive particles and a memory layer including the resin between the first conductor and the conductive particles is formed.
Claims12
1-9. (canceled)
A method for manufacturing a memory element, comprising the steps of:
- placing a conductive paste so as to fill up a space between a first conductor and a second conductor, the conductive paste comprising conductive particles each of which has a size of greater than or equal to 0.1 μM and less than or equal to 10 μm, a resin, and a solvent;
- and
- vaporizing the solvent to form a memory layer including the resin between the first conductor and the second conductor.
15-19. (canceled)
A method for manufacturing a memory element, comprising the steps of:
- placing a conductive paste so as to fill up a space between a first conductor and a second conductor, the conductive paste comprising conductive particles, a resin, and a solvent;
- and
- vaporizing the solvent to form a memory layer including the resin between the first conductor and the second conductor.
Dependencies are inferred from the claim text.