Removing method of a hard mask
AssigneeUnited Microelectronics Corp.
InventorsChe-Hua HSU, Shao- Hua Hsu, Zhi-Cheng Lee, Cheng-Guo Chen, Shin-Chi Chen, Hung-Ling Shih, Hung-Yi Wu, Heng-Ching Huang
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Abstract
A removing method of a hard mask includes the following steps. A substrate is provided. At least two MOSFETs are formed on the substrate. An isolating structure is formed in the substrate and located between the at least two MOSFETs. Each of the MOSEFTs includes a gate insulating layer, a gate, a spacer and a hard mask on the gate. A protecting structure is formed on the isolating structure and the hard mask is exposed from the protecting structure. The exposed hard mask is removed to expose the gate.
Claims10
A removing method of a hard mask, comprising:
- providing a substrate;
- forming at least two MOSFETs on the substrate and an isolating structure between the at least two MOSFETs, each of the two MOSFETs comprising a gate insulating layer, a gate, a spacer and a hard mask on the gate;
- forming either a photoresist layer or a bottom anti-reflective coating layer on the substrate to cover the at least two MOSFETs and the isolating structure;
- etching back either the photoresist layer or the bottom anti-reflective coating layer without a mask till the hard masks of the at least two MOSFETs are exposed, wherein the remained photoresist layer or the remained bottom anti-reflective coating layer forms a protecting structure located on and directly contacted with the isolating structure;
- and
- removing the exposed hard masks of the at least two MOSFETs.
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Dependencies are inferred from the claim text.