Inducing stress in fin-fet device
AssigneesGlobalfoundries Inc., International Business Machines Corporation
InventorsVeeraraghavan S. Basker, Huiming Bu, Effendi Leobandung, Theodorus E. Standaert, Kingsuk Maitra
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Abstract
A method of forming a fin-shaped field effect transistor (fin-FET) is disclosed. In one embodiment, the method comprises: partially amorphizing a fin overlying a substrate; forming a stress layer over a portion of the partially amorphized fin; annealing to impart stress in the partially amorphized fin to form a stressed fin; removing the stress layer from over the portion of stressed fin; and forming a gate over the stressed fin after the removing of the stress layer.
Claims14
A method of forming a fin-shaped field effect transistor (fin-FET), the method comprising:
- providing a partially amorphized fin overlying a substrate;
- forming a stress layer over a portion of the partially amorphized fin;
- annealing to impart stress in the partially amorphized fin to form a stressed fin;
- removing the stress layer from over the portion of the stressed fin;
- forming a metal high-dielectric constant (MHK) layer over the stressed fin after the removing of the stress layer;
- and
- forming a gate over the MHK layer after the removing of the stress layer and the forming of the MHK layer.
11-20. (canceled)
Dependencies are inferred from the claim text.