Organic semiconductor device, manufacturing method of same, organic transistor array, and display

A manufacturing method of an organic semiconductor device, wherein the method comprises:

• a gate electrode formation step of using a substrate to form a gate electrode on the substrate;
• an insulation partitioned part formation step of forming an insulation partitioned part on the gate electrode formed in the gate electrode formation step such that a height of the insulation partitioned part is in the range from 0.1 μm to 1.5 μm and an opening part of the insulation partitioned part is disposed above the gate electrode;
• a gate insulation layer formation step of forming a gate insulation layer made of an insulation resin material, in the opening part of the insulation partitioned part formed in the insulation partitioned part formation step and on the gate electrode;
• an organic semiconductor layer formation step of forming an organic semiconductor layer made of an organic semiconductor material on the gate insulation layer formed in the gate insulation layer formation step;
• and
• a source/drain electrode formation step of forming a source electrode and a drain electrode on the organic semiconductor layer formed in the organic semiconductor layer formation step.