Process for forming thin film encapsulation layers

A process of encapsulating an electronic device with a thin film comprising:

• providing an electronic device on a substrate;
• providing a plurality of gaseous material sources including a first source of a first reactant gaseous material, a second source of a second reactant gaseous material, and a third source of a inert gaseous material;
• providing a delivery head in fluid communication with the gaseous material sources through a plurality of inlet ports, the first gaseous material source being connected to a first inlet port, the second gaseous material source being connected to a second inlet port, the third gaseous material source being connected to a third inlet port, the delivery head including an output face and a first plurality of elongated substantially parallel emissive channels connected in fluid communication with the first inlet port, a second plurality of elongated substantially parallel emissive channels connected to the second inlet port, and a third plurality of elongated substantially parallel emissive channels connected to the third inlet port, at least one of the third elongated emissive channels being positioned to separate at least one of the first elongated emissive channels and at least one of the second elongated emissive channels;
• causing one or more of the first reactant gaseous material, the second reactant gaseous material, and the inert gaseous material to flow through the first elongated emissive channel, the second elongated emissive channel, and the third elongated emissive channel, respectively, of the delivery head, the flow including a pressure, the pressure generated by the flow of the one or more of the first reactant gaseous material, the second reactant gaseous material, and the third inert gaseous materials creating a gas fluid bearing that maintains a substantially uniform distance between the output face of the delivery head and the substrate;
• simultaneously directing the first reactant gaseous material, the second reactant gaseous material, and the inert gaseous material to flow through the first elongated emissive channel, the second elongated emissive channel, and the third elongated emissive channel, respectively, of the delivery head toward the electronic device and the substrate;
• causing a relative motion between the delivery head and the substrate to cause the second reactant gaseous material to react with at least a portion of the electronic device and a portion of the substrate that has been treated with the first reactant gaseous material to create a thin film encapsulation package including a thin film over at least one of the portion of the electronic device and the portion of the substrate that has been treated with the first reactant gaseous material, the encapsulation package providing at least the electronic device with an environmental bather layer.