Tandem thin-film silicon solar cell and method for manufacturing the same
AssigneeIntellectual Discovery Co., Ltd.
InventorSeung-Yeop Myong
Life of this patent
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Abstract
A tandem thin-film silicon solar cell comprises a transparent substrate, a first unit cell positioned on the transparent substrate, the first unit cell comprising a p-type window layer, an i-type absorber layer and an n-type layer, an intermediate reflection layer positioned on the first unit cell, the intermediate reflection layer including a hydrogenated n-type microcrystalline silicon oxide of which the oxygen concentration is profiled to be gradually increased and a second unit cell positioned on the intermediate reflection layer, the second unit cell comprising a p-type window layer, an i-type absorber layer and an n-type layer.
Claims14
A method for manufacturing a tandem thin-film silicon solar cell, comprising:
- coating a first electrode layer on a substrate;
- removing a portion of the first electrode layer to form a first separation trench using a first patterning process, thereby forming a plurality of first electrodes;
- forming a first unit cell layer on the plurality of first electrodes and in the first separation trench, the first unit cell layer comprising a p-type window layer, an i-type absorber layer and an n-type layer;
- forming an intermediate reflection layer including a hydrogenated n-type microcrystalline silicon oxide of which an oxygen concentration is profiled to be gradually increased from the light incident side;
- forming a second unit cell layer on the intermediate reflection layer;
- removing portions of the first and second unit cell layers to form a second separation trench using a second patterning process;
- stacking a second electrode layer on the second unit cell layer and in the second separation trench formed using the second patterning process;
- and
- removing a portion of the second electrode layer to forming a third separation trench using a third patterning process.
A method for manufacturing a tandem thin-film silicon solar cell, comprising:
- coating a first electrode layer on a substrate;
- removing a portion of the first electrode layer to form a first separation trench using a first patterning process, thereby forming a plurality of first electrodes;
- forming a first unit cell layer on the plurality of first electrodes and in the first separation trench;
- forming an intermediate reflection layer including a hydrogenated n-type microcrystalline silicon oxide of which an oxygen concentration is profiled to be gradually increased from the light incident side;
- forming a second unit cell layer on the intermediate reflection layer;
- removing portions of the first and second unit cell layers to form a second separation trench using a second patterning process;
- stacking a second electrode layer on the second unit cell layer and in the second separation trench formed using the second patterning process;
- and
- removing a portion of the second electrode layer to forming a third separation trench using a third patterning process.
Dependencies are inferred from the claim text.