Method for producing an optoelectronic semiconductor component

A method for producing an optoelectronic semiconductor component comprising:

• providing a first wafer having a patterned surface, wherein the patterned surface is formed at least in places by elevations having first and second heights, wherein the first height is greater than the second height;
• providing a second wafer;
• applying a photoresist to outer areas of the second wafer;
• patterning a surface of the photoresist facing away from the second wafer by impressing the patterned surface of the first wafer into the photoresist, wherein the elevations are impressed as trenches having a first and second depth into the photoresist;
• applying a patterning method to the patterned surface of the photoresist,
• wherein the structure applied on the photoresist is transferred at least in places to the outer area of the second wafer.

A method for producing an optoelectronic semiconductor component comprising:

• providing a first wafer having a patterned surface, wherein the patterned surface is formed at least in places by elevations having first and second heights, wherein the first height is greater than the second height;
• providing a second wafer;
• applying a photoresist to outer areas of the second wafer;
• patterning a surface of the photoresist facing away from the second wafer by impressing the patterned surface of the first wafer into the photoresist, wherein the elevations are impressed as trenches having a first and second depth into the photoresist;
• applying a patterning method to the patterned surface of the photoresist,
• wherein the structure applied on the photoresist is transferred at least in places to the outer area of the second wafer,
• the patterning method consists of exactly one dry-chemical etching and exactly one wet-chemical etching process,
• the dry-chemical etching process is applied at least to a region freed of the photoresist,
• the photoresist is insensitive relative to the dry-chemical etching process, and
• the wet-chemical etching process is applied to the patterned surface of the photoresist.