Method for producing a light-emitting diode
AssigneeOSRAM Opto Semiconductors GmbH
InventorGertrud Kräuter
Life of this patent
Estimating the term…
Abstract
A method for producing a light-emitting diode includes providing a light-emitting diode chip including a semiconductor body, and applying a luminescence conversion material to an outer area of the semiconductor body by thermal spraying such that at least part of electromagnetic radiation generated during operation of the light-emitting diode impinges on the luminescence conversion material, or providing a radiation-transmissive carrier, applying a luminescence conversion material to an outer area of the carrier by thermal spraying, and arranging the carrier at a radiation exit area of the light-emitting diode chip such that at least part of electromagnetic radiation generated during operation of the light-emitting diode impinges on the luminescence conversion material.
Claims17
A method for producing a light-emitting diode comprising:
- providing a light-emitting diode chip comprising a semiconductor body, and
- applying a luminescence conversion material to an outer area of the semiconductor body by thermal spraying such that at least part of electromagnetic radiation generated during operation of the light-emitting diode impinges on the luminescence conversion material, or
- providing a radiation-transmissive carrier,
- applying a luminescence conversion material to an outer area of the carrier by thermal spraying, and
- arranging the carrier at a radiation exit area of the light-emitting diode chip such that at least part of electromagnetic radiation generated during operation of the light-emitting diode impinges on the luminescence conversion material.
(canceled)
A method for producing a light-emitting diode comprising:
- providing a light-emitting diode chip comprising a semiconductor body, and
- applying a luminescence conversion material to an outer area of the semiconductor body by thermal spraying such that at least part of electromagnetic radiation generated during operation of the light-emitting diode impinges on the luminescence conversion material,
- wherein the light-emitting diode chip comprises a semiconductor body comprising a plurality of semiconductor layers grown epitaxially and at least one active region in which electromagnetic radiation is generated during operation of the light-emitting diode chip, and
- after the luminescence conversion material has been applied, part of the luminescence conversion material is removed.
Dependencies are inferred from the claim text.