Method for Producing a Thin-Film Semiconductor Chip

A method of manufacturing a III/V thin-film semiconductor chip, comprising:

• forming a plurality of active layers capable of generating electromagnetic radiation onto a growth substrate, wherein the plurality of active layers has a front side that faces the growth substrate and a reverse side that faces away from the growth substrate;
• forming a dielectric layer on the reverse side of the plurality of active layers;
• directing energy into a defined section of the dielectric layer using a laser to create an opening in the dielectric layer and to expose the plurality of active layers;
• applying a metallic layer in the opening to create an electrically conductive contact point on the reverse side of the plurality of active layers, wherein the dielectric layer and metallic layer form a reflective stack;
• applying a carrier on the reflective stack;
• and
• removing the growth substrate.

A method of forming a thin-film III/V semiconductor chip, comprising:

• forming a plurality of active layers capable of generating electromagnetic radiation on a growth substrate, wherein the plurality of active layers has a front side adjacent to the growth substrate and a reverse side that faces away from the growth substrate;
• forming a plurality of reflective layers on a reverse side of the plurality of active layers, wherein the plurality of reflective layers includes a metallic layer and a dielectric layer;
• directing energy into a defined volumetric section of the plurality of reflective layers using a laser to create an electrically conductive contact point on the reverse side of the plurality of active layers;
• applying a carrier onto the plurality of reflective layers;
• and
• removing the growth substrate from the plurality of active layers.

A method of forming a thin-film III/V semiconductor chip, comprising:

• forming a plurality of active layers capable of generating electromagnetic radiation on a growth substrate, wherein the plurality of active layers have a front side adjacent to the growth substrate and a reverse side that faces away from the growth substrate;
• forming a metallic reflective layer on a reverse side of the plurality of active layers to create a contact point;
• tempering the contact point with laser energy;
• applying a carrier on the metallic reflective layer;
• and
• removing the growth substrate from the active layers.