Method for forming light emitting device

A method for forming a light emitting device, comprising:

• providing a first substrate;
• forming a semiconductor layer on the first substrate;
• forming a plurality of patterned masks and at least one light emitting diode element separating mask on the semiconductor layer;
• using an epitaxial lateral overgrowth (ELOG) method to grow an epitaxy layer on the semiconductor layer, wherein the epitaxy layer laterally grows on the patterned masks and the light emitting diode element separating masks, and the epitaxy layer is not coalesced over the light emitting diode element separating masks to isolate the light emitting diode elements;
• forming a light emitting diode structure on the epitaxy layer;
• forming a first electrode layer on the light emitting diode structure;
• bonding the light emitting diode structure to a second substrate;
• and
• performing a photoelectrochemical etching process to lift off the epitaxy layer from the first substrate.