Semiconductor device, method of manufacturing thereof, and method of manufacturing base material

A method of manufacturing a semiconductor device, the method comprising the steps of:

• forming a metal layer over a substrate;
• forming an oxide layer over the metal layer;
• forming a first inorganic insulating film over the oxide layer;
• forming an organic insulating film over the first inorganic insulating film;
• forming a second inorganic insulating film over the organic insulating film;
• and
• separating the substrate from the oxide layer, the first inorganic insulating film, the organic insulating film and the second inorganic insulating film at an interface between the metal layer and the substrate.

A method of manufacturing a semiconductor device, the method comprising the steps of:

• forming a first layer over a substrate, the first layer comprising polyimide;
• forming a second layer over the first layer, the second layer comprising silicon nitride;
• separating the substrate from the first layer and the second layer;
• and
• forming an EL element on the second layer.

A method of manufacturing a semiconductor device, the method comprising the steps of:

• forming a metal layer over a substrate;
• forming an oxide layer over the metal layer;
• forming a first inorganic insulating film over the oxide layer;
• forming an organic insulating film over the first inorganic insulating film;
• forming a second inorganic insulating film over the organic insulating film;
• separating the substrate from the oxide layer, the first inorganic insulating film, the organic insulating film and the second inorganic insulating film at an interface between the metal layer and the substrate;
• and
• forming an EL element on the second inorganic insulating film with an adhesive material between the EL element and the second inorganic insulating film.

A method of manufacturing a semiconductor device, the method comprising the steps of:

• forming a first layer over a substrate, the first layer comprising polyimide;
• forming a second layer over the first layer, the second layer comprising silicon nitride;
• separating the substrate from the first layer and the second layer;
• and
• forming a transistor on the second layer, the transistor comprising a compound semiconductor film.

A method of manufacturing a semiconductor device, the method comprising the steps of:

• forming a metal layer over a substrate;
• forming an oxide layer over the metal layer;
• forming a first inorganic insulating film over the oxide layer;
• forming an organic insulating film over the first inorganic insulating film;
• forming a second inorganic insulating film over the organic insulating film;
• separating the substrate from the oxide layer, the first inorganic insulating film, the organic insulating film and the second inorganic insulating film at an interface between the metal layer and the substrate;
• and
• forming a transistor on the second inorganic insulating film with an adhesive material between the transistor and the second inorganic insulating film, the transistor comprising a compound semiconductor film.