Method of manufacturing semiconductor device
AssigneeElpida Memory, Inc.
InventorOsamu Fujita
Life of this patent
Estimating the term…
Abstract
A method of manufacturing a semiconductor device may include, but is not limited to the following processes. First and second grooves are formed in a semiconductor substrate having a first surface. The first and second grooves have substantially the same vertical dimension. The first surface has first and second regions surrounded by the first and second grooves, respectively. An actual resistance value of the semiconductor substrate between a first point on the first region and a second point on the second region is measured. The vertical dimension of the first and second grooves is calculated with reference to the actual resistance value.
Claims20
A method of manufacturing a semiconductor device, comprising:
- forming first and second grooves in a semiconductor substrate having a first surface, the first and second grooves having substantially the same vertical dimension, and the first surface having first and second regions surrounded by the first and second grooves, respectively;
- measuring an actual resistance value of the semiconductor substrate between a first point on the first region and a second point on the second region;
- and
- calculating the vertical dimension of the first and second grooves with reference to the actual resistance value.
A method of manufacturing a semiconductor device, comprising:
- forming at least one groove in a semiconductor substrate having a first surface, the first surface having first and second regions separated from each other by the at least one groove;
- measuring a reference resistance value of the semiconductor substrate between first and second points on the first region;
- measuring an actual resistance value of the semiconductor substrate between a third point on the first region and a fourth point on the second region;
- calculating a difference between the reference resistance value and the actual resistance value;
- and
- calculating a vertical dimension of the at least one groove with reference to the difference.
A method comprising:
- measuring an actual resistance value of a semiconductor substrate between first and second points, the first and second points being positioned on first and second regions of a first surface of the semiconductor substrate, respectively, the first and second regions being surrounded by first and second grooves in the semiconductor substrate, respectively, and the first and second grooves having substantially the same vertical dimension;
- and
- calculating the vertical dimension of the first and second grooves with reference to the actual resistance value.
Dependencies are inferred from the claim text.