Magnetoresistive element

A magnetoresistive element comprising:

• a recording layer having magnetic anisotropy in a direction perpendicular to a film surface and having a variable magnetization direction;
• a reference layer having magnetic anisotropy in a direction perpendicular to a film surface and having an invariable magnetization direction;
• an intermediate layer provided between the recording layer and the reference layer;
• and
• a first buffer layer provided on a surface of the recording layer, which is opposite to a surface of the recording layer where the intermediate layer is provided, wherein
• the recording layer comprises a first magnetic layer which is provided in a side of the intermediate layer and contains Fe as a main component, and a second magnetic layer which is provided in a side of the first buffer layer and contains Co as a main component, and
• the first buffer layer comprises a nitrogen compound.

A magnetoresistive element comprising:

• a recording layer having magnetic anisotropy in a direction perpendicular to a film surface and having a variable magnetization direction;
• a reference layer having magnetic anisotropy in a direction perpendicular to a film surface and having an invariable magnetization direction;
• an intermediate layer provided between the recording layer and the reference layer;
• and
• a first buffer layer provided on a surface of the recording layer, which is opposite to a surface of the recording layer where the intermediate layer is provided, wherein
• the recording layer contains CoFe as a main component, the CoFe containing Fe at a higher concentration than Co, and
• the first buffer layer comprises a nitrogen compound.

A magnetoresistive element comprising:

• a recording layer having magnetic anisotropy in a direction perpendicular to a film surface and having a variable magnetization direction;
• a reference layer having magnetic anisotropy in a direction perpendicular to a film surface and having an invariable magnetization direction;
• an intermediate layer provided between the recording layer and the reference layer;
• and
• a first buffer layer provided on a surface of the recording layer, which is opposite to a surface of the recording layer where the intermediate layer is provided, wherein
• the recording layer comprises a first magnetic layer which is provided in a side of the intermediate layer and contains CoFe as a main component, and a second magnetic layer which is provided in a side of the first buffer layer and contains CoFe as a main component, a concentration of Fe in the first magnetic layer being higher than a concentration of Fe in the second magnetic layer, and
• the first buffer layer has a composition which contains one element selected from Al, Cu, Zr, Nb, Rh, and Si at 50 at. % in one element selected from Ir, Pd, and Pt.