Vapor deposition systems and methods
AssigneeCambridge Nano Tech Inc.
InventorsDouwe J. Monsma, Jill S. Becker
Life of this patent
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Abstract
Vapor deposition systems and methods associated with the same are provided. The systems may be designed to include features that can promote high quality deposition; simplify manufacture, modification and use; as well as, reduce the footprint of the system, amongst other advantages.
Claims20
An atomic layer deposition system comprising:
- a reaction chamber designed to enclose a substrate, the reaction chamber having a top surface, a bottom surface and a sidewall between the top and bottom surfaces;
- a first precursor supply connected to a precursor port formed in the bottom surface;
- and
- a second precursor supply connected to a precursor port formed in the bottom surface,
- wherein an outlet port is formed in the bottom surface.
An atomic layer deposition process comprising:
- positioning a substrate in a reaction chamber having a top surface, a bottom surface and a sidewall between the top and bottom surfaces;
- introducing a first precursor into the reaction chamber through a precursor port formed in the bottom surface;
- removing gaseous species through an outlet port formed in the bottom surface;
- introducing a second precursor in to the reaction chamber through a precursor port formed in the bottom surface;
- and
- removing gaseous species through the outlet port formed in the bottom surface.
A trap designed for use in a vapor deposition system to trap gaseous species, wherein a majority of the surface area of the trap is substantially parallel to flow of gaseous species through the trap.
An atomic layer deposition process comprising:
- positioning a substrate in a reaction chamber having a top surface, a bottom surface and a sidewall between the top and bottom surfaces;
- introducing a first precursor into the reaction chamber through a precursor port formed in the bottom surface, wherein a precursor layer of the first precursor is deposited on the substrate;
- removing gaseous species through an outlet port formed in the bottom surface;
- introducing a second precursor in to the reaction chamber through a precursor port formed in the bottom surface, wherein the precursor layer and the second precursor react to form a material layer on the substrate;
- removing gaseous species through the outlet port formed in the bottom surface,
- continuously introducing an inert gas into the reaction chamber during the steps of introducing the first precursor, removing gaseous species, introducing the second precursor and removing gaseous species;
- wherein the first precursor, the second precursor and the inert gas are introduced through the same precursor port,
- wherein gaseous species are continuously removed from the reaction chamber during the process.
Dependencies are inferred from the claim text.