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AssigneesResearch and Development Center, Shanghai Institute of Ceramics, Shanghai Institute of Ceramics, Chinese Academy of Sciences
InventorsZengwei Ge, Yong Zhu, Guoging Wu, Xueji Yin, Linyao Tang, Hanbin Zhao, Lizhen Gu
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A high-purity tellurium dioxide (TeO2) single crystal and its manufacturing method are provided. The method comprises the following procedures: firstly performing a first single crystal growth, and then dissolving the resulting single crystal again, thereafter adding a precipitation agent to form powder, and finally performing a second single crystal growth of as-prepared powder to obtain the high purity single crystal. The TeO2 single crystal prepared according to present invention is of high purity, especially with a content of radioactive impurities such as U and Th decreased to a level of 10−13 g/g.
A manufacturing method for high-purity TeO2 single crystal, comprising:
A high-purity TeO2 single crystal, wherein the concentration of U is lower than 9.9 ×10−13 g/g, Th is lower than 9.9×10−13 g/g.
A high-purity TeO2 single crystal, wherein the concentration of U is lower than 9.9 ×10−14 g/g.
Dependencies are inferred from the claim text.