Group iii nitride-based green-laser diodes and waveguide structures thereof
AssigneeCorning Incorporated
InventorsDmitry Sizov, Rajaram Bhat, Chung-En Zah
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Abstract
Group III nitride-based laser diodes comprise an n-side cladding layer formed of n-doped (Al,In)GaN, an n-side waveguide layer formed of n-doped (Al)InGaN, an active region, a p-side waveguide layer formed of p-doped (Al)InGaN, and a p-side cladding layer formed of p-doped (Al,In)GaN. Optical mode is shifted away from high acceptor concentrations in p-type layers through manipulation of indium concentration and thickness of the n-side waveguide layer. Dopant and compositional profiles of the p-side cladding layer and the p-side waveguide layer are tailored to reduce optical loss and increased wall plug efficiency.
Claims28
A Group III nitride-based laser diode comprising an n-side cladding layer formed of n-doped (Al,In)GaN, an n-side waveguide layer formed of n-doped (Al)InGaN, an active region, a p-side waveguide layer formed of p-doped (Al)InGaN, and a p-side cladding layer formed of p-doped (Al,In)GaN, wherein:
- the active region is interposed between the n-side cladding layer and the p-side cladding layer and extends substantially parallel to the n-side cladding layer and the p-side cladding layer;
- the active region comprises one or more InGaN quantum wells producing electrically-pumped stimulated emission of photons and having optical gain at a lasing wavelength from 510 nm to 580 nm;
- the n-side waveguide layer is interposed between the active region and the n-side cladding layer;
- the n-side waveguide layer has an n-side waveguide layer thickness from 1 nm to 300 nm;
- the p-side waveguide layer is interposed between the active region and the p-side cladding layer;
- the p-side waveguide layer has a p-side waveguide layer acceptor concentration less than 3×1017 cm−3 and a p-side waveguide layer thickness less than 100 nm;
- the p-side waveguide layer thickness is less than the n-side waveguide layer thickness;
- the p-side cladding layer comprises a first thickness portion and a second thickness portion, the first thickness portion being interposed between the second thickness portion and the p-side waveguide layer;
- the first thickness portion of the p-side cladding layer has a first-portion thickness of 20 nm to 200 nm and a first-portion acceptor concentration less than 3×1017 cm−3;
- and
- the second thickness portion of the p-side cladding layer has a second-portion acceptor concentration greater than 3×1017 cm−3.
A Group III nitride-based laser diode comprising an n-side cladding layer formed of n-doped (Al,In)GaN, an n-side waveguide layer formed of n-doped (Al)InGaN, an active region, a p-side waveguide layer formed of p-doped (Al)InGaN, and a p-side cladding layer formed of p-doped (Al,In)GaN, wherein:
- the active region is interposed between the n-side cladding layer and the p-side cladding layer and extends substantially parallel to the n-side cladding layer and the p-side cladding layer;
- the active region comprises one or more InGaN quantum wells producing electrically-pumped stimulated emission of photons and having optical gain at a lasing wavelength from 510 nm to 580 nm;
- the n-side waveguide layer is interposed between the active region and the n-side cladding layer;
- the n-side waveguide layer has an n-side waveguide layer indium concentration from about 3% to about 11%;
- the p-side waveguide layer is interposed between the active region and the p-side cladding layer;
- the p-side waveguide layer has a p-side waveguide layer acceptor concentration less than 3×1017 cm3 and a p-side waveguide layer indium concentration from about 0% to about 9%;
- the p-side waveguide layer indium concentration is less than the n-side waveguide layer indium concentration;
- the p-side cladding layer comprises a first thickness portion and a second thickness portion, the first thickness portion being interposed between the second thickness portion and the p-side waveguide layer;
- the first thickness portion of the p-side cladding layer has a first-portion thickness of 20 nm to 200 nm and a first-portion acceptor concentration less than 3×1017 cm−3;
- and
- the second thickness portion of the p-side cladding layer has a second-portion acceptor concentration greater than 3×1017 cm−3.
Dependencies are inferred from the claim text.