Semiconductor laser

A semiconductor laser, comprising a semiconductor laminated body formed in a ring shape and first and second electrodes,

• the semiconductor laminated body including:
• an active layer;
• first and second cladding layers formed on both sides of the active layer;
• first and second contact layers formed on the first and second cladding layers and electrically connected to the first and second electrodes;
• and
• first and second modified layers formed by selectively modifying one peripheral sidewall of the first cladding layer and another peripheral sidewall of the second cladding layer so as to have a refractive index lower than the refractive indexes of the first and second cladding layers.

A semiconductor laser, comprising a semiconductor laminated body formed in a disk shape and first and second electrodes,

• the semiconductor laminated body including:
• an active layer;
• first and second cladding layers formed on both sides of the active layer;
• first and second contact layers formed on the first and second cladding layers and electrically connected to the first and second electrodes;
• and
• first and second modified layers formed by selectively modifying the peripheral sidewalls of the first and second cladding layers so as to have a refractive index lower than the refractive indexes of the first and second cladding layers.