Built-in self repair for memory
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJiunn-Der YU, Tsung-Hsiung LI
Life of this patent
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Abstract
A method for repairing a memory includes running a built-in self-test of the memory to find faulty bits. A first repair result using a redundant row block is calculated. A second repair result using a redundant column block is calculated. The first repair result and the second repair result are compared. A repair method using either the redundant row block or the redundant column block is selected. The memory is repaired by replacing a row block having at least one faulty bit with the redundant row block or replacing a column block having at least one faulty bit with the redundant column block.
Claims20
A method for repairing a memory comprising:
- running a built-in self test of the memory to find faulty bits;
- calculating a first repair result using a redundant row block;
- calculating a second repair result using a redundant column block;
- comparing the first repair result and the second repair result;
- selecting a repair method using either the redundant row block or the redundant column block;
- and
- repairing the memory by replacing a row block having at least one faulty bit with the redundant row block or replacing a column block having at least one faulty bit with the redundant column block.
A memory having a built-in self-repair (BISR) circuit that is configured to perform a set of operations, the set of operations comprising:
- running a built-in self test of the memory to find faulty bits;
- calculating a first repair result using a redundant row block;
- calculating a second repair result using a redundant column block;
- comparing the first repair result and the second repair result;
- selecting a repair method using either the redundant row block or the redundant column block;
- and
- repairing the memory by replacing a row block having at least one faulty bit with the redundant row block or replacing a column block having at least one faulty bit with the redundant column block.
A computer-readable storage medium having instructions stored thereon, the instructions when executed by a processor causing the processor to perform operations of:
- running a built-in self test of the memory to find faulty bits;
- calculating a first repair result using a redundant row block;
- calculating a second repair result using a redundant column block;
- comparing the first repair result and the second repair result;
- selecting a repair method using either the redundant row block or the redundant column block;
- and
- repairing the memory by replacing a row block having at least one faulty bit with the redundant row block or replacing a column block having at least one faulty bit with the redundant column block.
Dependencies are inferred from the claim text.