Nonvolatile semiconductor storage device and method for driving the same

A nonvolatile semiconductor storage device having:

• nonvolatile memory cells which are connected in series in a first direction and are arranged in a matrix by the arranged series connections;
• and
• word lines which connect control gates of the memory cells in a second direction perpendicular to the first direction,
• wherein a first interval and a second interval wider than the first interval are alternately repeated for intervals in the second direction between the memory cells,
• the nonvolatile semiconductor storage device comprising:
• a drive unit for measuring a write speed of a main memory cell, and then writing data based on the measurement result in a support memory cell which is connected to the same word line as the main memory cell and is spaced at the first interval in the second direction.

A method for driving a nonvolatile semiconductor storage device, the nonvolatile semiconductor storage device having:

• nonvolatile memory cells which are connected in series in a first direction and are arranged in a matrix by the arranged series connections;
• and
• word lines which connect control gates of the memory cells in a second direction perpendicular to the first direction,
• wherein a first interval and a second interval wider than the first interval are alternately repeated for intervals in the second direction between the memory cells,
• the method comprising:
• writing data in a first memory cell;
• thereafter, writing data in a second memory cell which is connected to the same word line as the first memory cell and is spaced at the first interval in the second direction;
• thereafter, reading the data in the second memory cell;
• and
• reading the data in the first memory cell with correction based on the read value of the second memory cell.