Memory and operation method therefor
AssigneeMacronix International Co., Ltd.
InventorsHsin-Yi Ho, Chun-Hsiung Hung, Yun-Chen Chou
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Abstract
An operation method for a memory device having a plurality of memory cells includes: reading the plurality of memory cells by a first word line voltage to get a first number of a first logic state; reading the plurality of memory cells by a second word line voltage to get a second number of the first logic state, the second word line voltage different from the first word line voltage; and using the second word line voltage as a target word line voltage if the first number of the first logic state is equal to the second number of the first logic state.
Claims12
An operation method of a memory device including a plurality of memory cells, comprising:
- reading the plurality of memory cells by a first word line voltage to get a first number of a first logic state;
- reading the plurality of memory cells by a second word line voltage to get a second number of the first logic state, the second word line voltage different from the first word line voltage;
- and
- using the second word line voltage as a target word line voltage if the first number of the first logic state is equal to the second number of the first logic state.
A memory device including:
- a memory array including a plurality of memory cells;
- a read control circuit, coupled to the memory array, the read control circuit controlling reading operation on the memory array;
- wherein
- under control of the read control circuit, the memory array is read by a first word line voltage to get a first number of a first logic state;
- under control of the read control circuit, the memory array is read by a second word line voltage to get a second number of a first logic state, the second word line voltage different from the first word line voltage;
- and
- the read control circuit uses the second word line voltage as a target word line voltage if the read control circuit checks that the first number of the first logic state is equal to the second number of the first logic state.
Dependencies are inferred from the claim text.