Nonvolatile semiconductor memory device capable of speeding up data write
AssigneeKabushiki Kaisha Toshiba
InventorMasanobu SHIRAKAWA
Life of this patent
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Abstract
According to one embodiment, a nonvolatile semiconductor memory device includes a memory cell array and a control circuit. The memory cell array having a plurality of memory cells is connected to a plurality of word lines stacked on a semiconductor substrate, and the memory cells having a charge accumulation layer, and the charge accumulation layers are united between adjacent memory cells. When writing data to a memory cell group connected to the nth (n is a natural number) word line of the memory cell array, the control circuit controls to simultaneously apply the same program voltage to memory cell groups connected to the (n−1)th and (n+1)th word lines.
Claims12
A nonvolatile semiconductor memory device comprising:
- a memory cell array having a plurality of memory cells connected to a plurality of word lines stacked on a semiconductor substrate, the memory cells having a charge accumulation layer, and the charge accumulation layers are united between adjacent memory cells;
- and
- a control circuit configured to, when writing data to a memory cell group connected to an nth (n is a natural number) word line, control to simultaneously apply the same program voltage to memory cell groups connected to an (n−1)th word line and an (n+1)th word line.
A nonvolatile semiconductor memory device comprising:
- a plurality of word lines stacked on a semiconductor substrate;
- a NAND string in which a plurality of memory cells each having a charge accumulation layer are connected, the charge accumulation layers are united between adjacent memory cells, and each of the memory cells is connected to each of the word lines;
- and
- a control circuit which simultaneously applies the same program voltage to an (n−1)th word line and an (n+1)th word line when writing data to a memory cell which is connected to an nth-word line.
Dependencies are inferred from the claim text.