Flash memory system and word line interleaving method thereof
AssigneeSamsung Electronics Co., Ltd.
InventorsYongjune KIM, Hong Rak SON, Seonghyeog CHOI, Junjin KONG
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Abstract
Provided are a flash memory system and a word line interleaving method thereof. The flash memory system includes a memory cell array, and a word line interleaving logic. The memory cell array is connected to a plurality of word lines. The word line (WL) interleaving logic performs an interleaving operation on WL data corresponding to at least two different wordlines and programming data, including the interleaved data, to the memory cell array.
Claims36
A method of operating a memory having a memory cell array, memory cells in the memory cell array having varying cell conditions, and a plurality of wordlines coupled to memory cells along one direction of the array, the method comprising:
- interleaving data for at least two different wordlines;
- and
- programming data, including the interleaved data, to the memory cell array.
A memory system, comprising:
- a memory device including
- a memory cell array having an array of memory cells, and
- a plurality of wordlines, each wordline being coupled to memory cells along a direction of the array;
- a wordline interleaver configured to interleave data for at least two different wordlines;
- and
- a memory controller configured to program data, including the interleaved data, to the memory cell array.
Dependencies are inferred from the claim text.