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US 2012/0069657 A1Published application
Memory device and self interleaving method thereof
AssigneeSamsung Electronics Co., Ltd.
InventorsSeonghyeog CHOI, Hong Rak Son, Junjin Kong, Jaehong Kim, KyoungLae Cho, Yong June Kim
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Abstract
A memory device includes a memory cell array, a self interleaver configured to interleave and load data on the fly into a buffer circuit using an interleaving scheme, and a control logic configured to control programming of the interleaved data in the memory cell array.
Claims43
A memory device, comprising:
- a memory cell array;
- a self interleaver configured to interleave and load data on the fly into a buffer circuit using an interleaving scheme;
- and
- a control logic configured to control programming of the interleaved data in the memory cell array.
1 more element
A method of operating a memory device, comprising:
- receiving data;
- interleaving and loading received data on the fly into a buffer circuit using an interleaving scheme;
- and
- programming the interleaved data in a memory cell array of the memory device.
1 more element
Dependencies are inferred from the claim text.