Spin torque transfer memory cell structures and methods
AssigneeMicron Technology, Inc.
InventorsStephen J. Kramer, Gurtej S. Sandhu
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Abstract
Spin Torque Transfer (STT) memory cell structures and methods are described herein. One or more STT memory cell structures include a tunneling barrier material positioned between a ferromagnetic storage material and a pinned ferromagnetic material in contact with an antiferromagnetic material. The tunneling barrier material is a multiferroic material and the antiferromagnetic material, the ferromagnetic storage material, and the pinned ferromagnetic material are positioned between a first electrode and a second electrode.
Claims31
A spin torque transfer (STT) memory cell structure, comprising:
- a tunneling barrier material positioned between a ferromagnetic storage material and a pinned ferromagnetic material in contact with an antiferromagnetic material;
- wherein the tunneling barrier material is a multiferroic material, and wherein the antiferromagnetic material, the ferromagnetic storage material, and the pinned ferromagnetic material are positioned between a first electrode and a second electrode.
A spin torque transfer (STT) memory cell, comprising:
- a stack structure including:
- a first magnetic tunneling junction (MTJ) element positioned between a top electrode and a bottom electrode, wherein a tunneling barrier material of the first MTJ is a first multiferroic material;
- a second MTJ element positioned between the top electrode and the bottom electrode, wherein a tunneling barrier material of the second MTJ is a second multiferroic material;
- and
- an access device coupled to the stack structure.
A spin torque transfer (STT) memory cell, comprising:
- a magnetic tunneling junction (MTJ) element positioned between a top electrode and a bottom electrode, wherein a tunneling barrier material of the MTJ is a multiferroic material;
- and
- a vertical access device coupled to the MTJ element.
A method of operating a spin torque transfer (STT) memory cell, the method comprising:
- altering a magnetization direction of a first free ferromagnetic storage material of a first magnetic tunneling junction (MTJ) element of the STT memory cell by providing an electric field to a first multiferroic tunneling barrier material of the first MTJ element.
Dependencies are inferred from the claim text.