Spin torque transfer memory cell structures and methods

A spin torque transfer (STT) memory cell, comprising:

• a magnetic tunneling junction (MTJ) element positioned between a first electrode and a second electrode;
• a first multiferroic material having an inner edge portion in contact with a ferromagnetic storage material of the MTJ element;
• and
• a vertical access device coupled to the MTJ element, wherein the first multiferroic material is located between a first gate electrode and a second gate electrode of the vertical access device.

A spin torque transfer (STT) memory cell, comprising:

• a magnetic tunneling junction (MTJ) element positioned between a first electrode and a second electrode;
• a first multiferroic material having an upper surface portion in contact with a ferromagnetic storage material of the MTJ element;
• and
• a vertical access device coupled to the MTJ element, wherein the first multiferroic material is located between a first gate electrode and a second gate electrode of the vertical access device.

A spin torque transfer (STT) memory cell, comprising:

• a first ferromagnetic storage material in contact with a first multiferroic material;
• a first tunneling barrier material positioned between the first ferromagnetic storage material and a first pinned ferromagnetic material;
• a second ferromagnetic storage material in contact with a second multiferroic material;
• a second tunneling barrier material positioned between the second ferromagnetic storage material and a second pinned ferromagnetic material;
• and
• a vertical access device having a first gate electrode and a second gate electrode, wherein the first multiferroic material and the second multiferroic material are located between the first gate electrode and the second gate electrode.