Magnetoresistive element and magnetic random access memory

A magnetoresistive element comprising:

• an electrode layer which comprises a metal layer having a thickness of 0.3 nm or less and including Ta;
• a first magnetic layer which is disposed on the metal layer to be in contact with the metal layer and which has a magnetization easy axis in a direction perpendicular to a film plane and which is variable in magnetization direction;
• a second magnetic layer which is disposed on the first magnetic layer and which has a magnetization easy axis in the direction perpendicular to the film plane and which is invariable in magnetization direction;
• and
• a first nonmagnetic layer provided between the first magnetic layer and the second magnetic layer,
• wherein the magnetization direction of the first magnetic layer is varied by a current that runs through the first magnetic layer, the first nonmagnetic layer, and the second magnetic layer.

A magnetoresistive element comprising:

• an electrode layer which comprises a metal layer including at least one of Mo, Nb, W, Ta, and Ir;
• a first magnetic layer which is disposed on the metal layer to be in contact with the metal layer and which has a magnetization easy axis in a direction perpendicular to a film plane and which is variable in magnetization direction;
• a second magnetic layer which is disposed on the first magnetic layer and which has a magnetization easy axis in the direction perpendicular to the film plane and which is invariable in magnetization direction;
• and
• a first nonmagnetic layer provided between the first magnetic layer and the second magnetic layer,
• wherein the first magnetic layer comprises a structure in which a first ferromagnetic material and a second ferromagnetic material are stacked, and the second ferromagnetic material is disposed between the first ferromagnetic material and the first nonmagnetic layer, and
• the magnetization direction of the first magnetic layer is varied by a current that runs through the first magnetic layer, the first nonmagnetic layer, and the second magnetic layer.