Semiconductor device
AssigneeRenesas Electronics Corporation
InventorsRyoji MATSUDA, Motoi Ashida, Takaharu Tsuji
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AssigneeRenesas Electronics Corporation
InventorsRyoji MATSUDA, Motoi Ashida, Takaharu Tsuji
Estimating the term…
A semiconductor device which it can accommodate variations in a write current threshold in each memory cell and can secure a write margin is provided. An MRAM device includes an MTJ memory cell arranged in a matrix, plural bit lines each arranged corresponding to a memory cell column, plural digit lines each arranged corresponding to a memory cell row, and a write current adjusting unit which adjusts a current amount of a write current to be flowed through a bit line and/or a digit line, in order to perform a data write to each MTJ memory cell normally. The write current adjusting unit divides the plural bit lines and/or the plural digit lines into units of at least one write current line as division units, and includes plural write current adjusting circuits which adjust the current amount of write current in each of the division units.
A semiconductor device comprising:
Dependencies are inferred from the claim text.