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US 2012/0069635 A1Published application
Capacity and density enhancement circuit for sub-threshold memory unit array
AssigneeSoutheast University
InventorsJie Li, Na Bai, Ming Ling, Aiguo Bu, Chao Wang, Chen Hu
Life of this patent
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Abstract
A capacity and density enhancement circuit for a sub-threshold memory unit array which can decrease the drain current in the bit lines and enhance the pull-up capability of memory cells. The capacity and density enhancement circuit is composed of a first enhancement transistor, a second enhancement transistor, a first mask transmission gate, a second mask transmission gate, a first logic memory capacitor and a second logic memory capacitor.
Claims3
A capacity and density enhancing circuit for a sub-threshold memory cell, comprising:
- a first enhanced transistor, a second enhanced transistor, a first shielded transmission gate, a second shielded transmission gate, a first logical storage capacitor, and a second logical storage capacitor, wherein, a source end of the first enhanced transistor is connected with a source end of the second enhanced transistor and is connected to a supply voltage, a drain end of the first enhanced transistor is connected with an input/output end of the first shielded transmission gate and serves as one end of a bit line of a memory cell array, a drain end of the second enhanced transistor is connected with an input/output end of the second shielded transmission gate and serves as a NOT end of the bit line of the memory cell array, a body end of the first enhanced transistor is connected with a local grid end, a grid end of the first enhanced transistor is connected with one end of the first logical storage capacitor and is connected to the output/input end of the first shielded transmission gate, another end of the first logical storage capacitor is grounded, a body end of the second enhanced transistor is connected with the local grid end, a grid end of the second enhanced transistor is connected with one end of the second logical storage capacitor and connected to the output/input end of the second shielded transmission gate, another end of the second logical storage capacitor is grounded, a control end of the first shielded transmission gate and second shielded transmission gate is used for input of an enhanced control signal, a complementary control end of the first shielded transmission gate and second shielded transmission gate is used for a NOT input of the enhanced control signal.
Dependencies are inferred from the claim text.