Nonvolatile semiconductor memory device and method of controlling the same
AssigneeKabushiki Kaisha Toshiba
InventorHiroshi ITO
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Abstract
According to one embodiment, a nonvolatile semiconductor memory device comprises a memory cell which includes a variable resistance element and a current-limiting element that has a nonlinear current-voltage characteristic and a driver which changes the resistance of the variable resistance element by causing a first current to flow in the memory cell. In addition, the nonvolatile semiconductor memory device further comprises a detection module which detects a change in the resistance of the memory cell based on the magnitude of the first current and a current supplying module which causes a second current to flow in the detection module in place of the first current.
Claims19
A nonvolatile semiconductor memory device comprising:
- a memory cell which includes a variable resistance element and a current-limiting element that has a nonlinear current-voltage characteristic;
- a driver which changes the resistance of the variable resistance element by causing a first current to flow in the memory cell;
- a detection module which detects a change in the resistance of the memory cell based on the magnitude of the first current;
- and
- a current supplying module which causes a second current to flow in the detection module in place of the first current.
A method of controlling a nonvolatile semiconductor memory device, the method comprising:
- causing a first current to flow in a detection module which detects a change in the resistance of a memory cell that includes a variable resistance element and a current-limiting element that has a nonlinear current-voltage characteristic;
- and
- causing a second current to flow in the memory cell after stopping the first current.
Dependencies are inferred from the claim text.