Reactive metal implated oxide based memory
AssigneeMicron Technology, Inc.
InventorsD.V. Nirmal Ramaswamy, Gurtej S. Sandhu
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Abstract
Methods, devices, and systems associated with oxide based memory can include a method of forming an oxide based memory cell. Forming an oxide based memory cell can include forming a first conductive element, forming an oxide over the first conductive element, implanting a reactive metal into the oxide, and forming a second conductive element over the oxide.
Claims24
A method of forming an oxide based memory cell, comprising:
- forming a first conductive element;
- forming an oxide over the first conductive element;
- implanting a reactive metal into the oxide;
- and
- forming a second conductive element over the oxide.
An oxide based memory cell, comprising:
- a first conductive element;
- a second conductive element;
- and
- an oxide between the first conductive element and the second conductive element, wherein the oxide is implanted with a metal that is reactive with respect to the oxide.
A method of operating an oxide based memory cell, comprising:
- biasing a second conductive element with a particular voltage relative to a first conductive element, wherein the first and the second conductive elements are separated by a first oxide that is implanted with a metal that is reactive with respect to the first oxide;
- wherein biasing the second conductive element with the particular voltage causes formation of a second oxide at an interface between the first oxide and the second conductive element by migration of oxygen ions from the first oxide to the second oxide to react with the implanted metal.
A method of operating an oxide based memory cell, comprising:
- programming the memory cell to one of a number of states according to a thickness of a second oxide formed at an interface between a first oxide and a conductive element, wherein the first oxide is implanted with a metal that is reactive with respect to the first oxide;
- wherein programming includes biasing the conductive element with a particular voltage to move oxygen ions from the first oxide to the second oxide to react with the implanted metal.
A method of operating an oxide based memory cell, comprising:
- biasing a second conductive element with a particular voltage relative to a first conductive element, wherein the first and the second conductive elements are separated by a first oxide that is implanted with a metal that is reactive with respect to the first oxide;
- wherein biasing the second conductive element with the particular voltage causes dissolution of a second oxide at an interface between the first oxide and the second conductive element by migration of oxygen ions from the second oxide to the first oxide.
Dependencies are inferred from the claim text.