Conducting paste for device level interconnects
AssigneeEndicott Interconnect Technologies, Inc.
InventorsRabindra N. Das, Roy H. Magnuson, Mark D. Poliks, Voya R. Markovich
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AssigneeEndicott Interconnect Technologies, Inc.
InventorsRabindra N. Das, Roy H. Magnuson, Mark D. Poliks, Voya R. Markovich
Estimating the term…
A conducting paste and method of forming the paste for device level interconnection. The conducting paste contains metal loading in the range 80-95% that is useful for making five micron device level interconnects. The conducting paste is made by mixing two different conducting pastes, each paste maintaining its micro level individual rich region in the mixed paste even after final curing. One paste contains at least one low melting point alloy and the other paste contains noble metal fillers such as gold or silver flakes. In general, average flake size below five micron is suitable for five micron interconnects. However, 1 micron or smaller silver flakes and an LMP mixture is preferred for five micron interconnects. The amount of LMP based paste in the final mixture is preferably 20-50% by weight. The nano micro paste embodiment shows good electrical yield (81%) and low contact resistance.
An electrically conducting paste mixture for connecting device level interconnects, comprising:
A method of forming an electrically conducting paste mixture with metal loading in the range of 85-95% useful for connecting micron device level interconnects, the method comprising:
A method of forming an electrically conducting paste mixture that is effective for low temperature sintering and can precipitate a minimum amount of nano particles uniformly, the method comprising:
A method of sensor fabrication of a device, such as an infrared camera, using an electronically conductive paste, the method comprising:
An electrical package comprising:
Dependencies are inferred from the claim text.