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US 2012/0069530 A1Published application
Semiconductor device and method of manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorsSatoshi Inoue, Kazushige Kanda, Yuui Shimizu
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Abstract
According to one embodiment, a semiconductor device includes a stacked chip includes semiconductor chips which are stacked, the semiconductor chips comprises semiconductor substrates and through electrodes formed in the semiconductor substrates, respectively, the through electrodes being electrically connected, and deactivating circuits provided in the semiconductor chips, respectively, and configured to deactivate a failed semiconductor chip.
Claims16
A semiconductor device comprising:
- a stacked chip comprising semiconductor chips which are stacked, the semiconductor chips comprises semiconductor substrates and through electrodes formed in the semiconductor substrates, respectively, the through electrodes being electrically connected;
- and
- deactivating circuits provided in the semiconductor chips, respectively, and configured to deactivate a failed semiconductor chip.
A method of manufacturing a semiconductor device, the method comprising:
- preparing wafers comprising semiconductor substrates and through electrodes formed in the semiconductor substrates, respectively;
- testing electrical properties of semiconductor chips included in each of the wafers;
- deactivating a failed semiconductor chip based on a result of the testing;
- stacking the wafers such that the through electrodes are electrically connected;
- and
- dividing the stacked wafers into stacked chips.
3 more elements
Dependencies are inferred from the claim text.