Stacked structure and method of manufacturing the same
AssigneeSanyo Electric Co., Ltd.
InventorsHitoshi Noguchi, Naoki Tanaka, Tatsuya Nakamura
Life of this patent
Estimating the term…
Loading patent…
AssigneeSanyo Electric Co., Ltd.
InventorsHitoshi Noguchi, Naoki Tanaka, Tatsuya Nakamura
Estimating the term…
[Problem to be Solved] A problem to be solved is to provide a stacked structure and a method of manufacturing the same that make generation of insulation breakdown unlikely, while providing a high dielectric constant and a high quality. [Means for Solving Problem] A stacked structure according to the present invention is a stacked structure in which a dielectric layer 3 is provided between a first conductive layer 1 and a second conductive layer 2. The dielectric layer 3 includes a dielectric film 31 formed on the first conductive layer 1, and a dielectric particle film 32 formed by applying a dispersion solution containing dielectric particles onto the dielectric film 31. A method of manufacturing the stacked structure according to the present invention includes a dielectric layer forming step of forming the dielectric layer 3 on the first conductive layer 1, and a conductive layer forming step of forming the second conductive layer 2 on the dielectric layer 3. The dielectric layer forming step includes a dielectric film forming step of forming the dielectric film 31 on the first conductive layer 1, and a particle film forming step of forming the dielectric particle film 32 by applying a dispersion solution containing dielectric particles onto the dielectric film 31.
A stacked structure comprising:
A method of manufacturing a stacked structure in which a dielectric layer is provided between a first conductive layer and a second conductive layer, the method comprising the steps of:
Dependencies are inferred from the claim text.