High frequency amplifier
AssigneeMitsubishi Electric Corporation
InventorToshio Okuda
Life of this patent
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Abstract
A high frequency amplifier includes a package substrate, an amplifying active device disposed on a top surface of the package substrate, a transmission line connected to the amplifying active device and transmitting a high frequency signal, a surface mounted device (SMD) component shunt-connected at a first end to the transmission line, a SMD component terminal connected to a second end of the SMD component and partially exposed at a back surface of the package substrate, and an external terminal partially exposed at the back surface of the package substrate and connected to a first end of the transmission line, opposite a second end of the transmission line that is connected to the amplifying active device.
Claims3
1-3. (canceled)
high frequency amplifier comprising:
- a package substrate;
- an amplifying active device disposed on a top surface of said package substrate;
- a first transmission line located on said package substrate so that said first transmission line is connected in series with said amplifying active device;
- a second transmission line located on said package substrate so that said second transmission line is connected in series to said amplifying active device;
- a first connecting terminal connected to said first transmission line and partially exposed at a back surface of said package substrate;
- and
- a second connecting terminal connected to said second transmission line and partially exposed at said back surface of said package substrate.
Dependencies are inferred from the claim text.