Field modulating plate and circuit
AssigneeNXP B.V.
InventorsSaad Kheder Murad, Ronaldus Johannus Martinus van Boxtel
Life of this patent
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Abstract
Consistent with various example embodiments, a field-controlling electrode applies a negative bias, relative to a source/drain electrode, increase voltage breakdown. The field-controlling electrode is located over a channel region and between source and drain electrodes, and adjacent a gate electrode. The field electrode shapes a field in a portion of the channel region laterally between the gate electrode and one of the source/drain electrodes, in response to a negative bias applied thereto.
Claims20
A circuit comprising:
- a gate electrode over a channel region and between source and drain electrodes, the gate electrode being configured and arranged with the channel region to apply an electric field to the channel region and control conductivity of the channel region between the source and drain electrodes;
- a field electrode between the gate electrode and the drain electrode and separated from the channel region by a distance greater than a separation between the gate electrode and the channel region;
- and
- a control circuit connected to the field electrode and the source electrode, the control circuit being configured and arranged with the field electrode and the channel region to bias the field electrode negatively relative to the source electrode and to shape an electric field in a portion of the channel region laterally between the gate electrode and the drain electrode.
An amplifier circuit comprising:
- source and drain electrodes separated by a channel region;
- a gate electrode over the channel region and between the source and drain electrodes, the gate electrode being configured and arranged with the channel region to apply an electric field to the channel region in response to a signal applied to the gate electrode, and therein control conductivity of the channel region between the source and drain electrodes and generate an amplified version of the signal applied to the gate;
- a field electrode between the gate electrode and the drain electrode and separated from the channel region by a distance greater than a separation between the gate electrode and the channel region, the field electrode being configured and arranged with the channel region to shape an electric field in the channel region in response to a negative bias applied to the field electrode;
- and
- a control circuit connected to the field electrode and configured and arranged, with the field electrode and the channel region, to negatively bias the field electrode relative to the source electrode and shape an electric field in a portion of the channel region laterally between the gate electrode and the drain electrode, and therein increase the breakdown voltage of the channel region.
A method for controlling a semiconductor device having a gate electrode over a channel region and between source and drain electrodes, and a field electrode over the channel region and laterally between the gate electrode and the drain electrode, the method comprising:
- biasing the gate electrode to apply an electric field to the channel region and control conductivity of the channel region between the source and drain electrodes;
- and
- applying a negative bias to the field electrode, relative to a bias at the source electrode, to shape a field in a portion of the channel region laterally between the gate electrode and the drain electrode.
Dependencies are inferred from the claim text.