Dc-driven electroluminescence device and light emission method
AssigneeKobundo Printing Company Ltd.
InventorTakuyoshi Ishimura
Life of this patent
Estimating the term…
Abstract
An inorganic electroluminescence device has a structure including a phosphor layer sandwiched between a first electrode and a second electrode; and a semiconductor structure in which N-type semiconductors and a P-type semiconductor, made of inorganic semiconductor materials, are joined to form an NPN type structure. The phosphor is made of an inorganic substance. The first electrode is to be a cathode and is formed on an insulating glass substrate. The second electrode is to be an anode and is disposed opposite the first electrode. The semiconductor structure is disposed between the cathode that is the first electrode and the phosphor layer.
Claims7
An inorganic electroluminescence device comprising:
- a structure comprising a phosphor layer sandwiched between a first electrode and a second electrode;
- and
- a semiconductor structure in which N-type semiconductors and a P-type semiconductor, made of inorganic semiconductor materials, are joined to form an NPN type structure,
- wherein the phosphor is made of an inorganic substance,
- wherein the first electrode is to be a cathode and is formed on an insulating glass substrate,
- wherein the second electrode is to be an anode and is disposed opposite the first electrode, and
- wherein the semiconductor structure is disposed between the cathode that is the first electrode and the phosphor layer.
A light emission method for DC-driven inorganic electroluminescence device comprising:
- preparing an NPN-type three-layer structure using first and second N-type semiconductors and a P-type semiconductor in an interior of the inorganic electroluminescence device;
- applying a forward direction voltage to a PN junction portion, made up of the first N-type semiconductor at a cathode side and the P-type semiconductor in the NPN-type three-layer structure, to inject electrons into the P-type semiconductor;
- and
- further reverse-biasing a PN junction portion made up of the P-type semiconductor and the second N-type semiconductor to form a depletion layer in the PN junction portion and using the electric field in the depletion layer portion to accelerate the electrons injected through the P-type semiconductor and make the electrons collide with luminescent centers or a fluorescent substance dispersed or mixed in a phosphor layer adjacent the second N-type semiconductor and thereby emit light.
Dependencies are inferred from the claim text.