Semiconductor device and method for manufacturing semiconductor device
AssigneeNEC Corporation
InventorsKentaro Mori, Yoshiki Nakashima, Daisuke Ohshima, Katsumi Kikuchi, Shintaro Yamamichi
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AssigneeNEC Corporation
InventorsKentaro Mori, Yoshiki Nakashima, Daisuke Ohshima, Katsumi Kikuchi, Shintaro Yamamichi
Estimating the term…
A semiconductor device comprises: a core substrate; at least one insulating layer and at least one wiring layer which are disposed on each of a first surface of the core substrate and a second surface opposite to the first surface; a via(s) which is disposed in each of the insulating layer and the core substrate, and connects the wiring layers to each other; a semiconductor element, mounted on the first surface of the core substrate, with a surface for forming an electrode terminal(s) facing up; and a connecting portion(s) which penetrates the insulating layer disposed on the first surface and directly connects the electrode terminal of the semiconductor element and the wiring layer disposed on the first surface. A minimum wiring pitch of the wiring layer directly connected to the connecting portion is smaller than that of any of the wiring layer(s) disposed on the second surface.
A semiconductor device comprising:
A method for manufacturing a semiconductor device comprising:
The method for manufacturing a semiconductor device according to 19, wherein said mounting said semiconductor element is carried out after said second wiring forming.
Dependencies are inferred from the claim text.