Chip assembly having via interconnects joined by plating

A method of forming a stacked microelectronic assembly comprising the steps of:

• (a) juxtaposing a first electrically conductive element overlying a major surface of a first semiconductor element with an electrically conductive pad exposed at a front surface of a second semiconductor element, wherein the second semiconductor element includes a first opening extending from a rear surface of the second semiconductor element towards a front surface thereof, the first opening being at least partially aligned with the conductive pad;
• (b) forming a second opening extending from the first opening of the second semiconductor element through the conductive pad and at least exposing a portion of the first conductive element;
• and
• (c) forming a second electrically conductive element extending through the first and second openings, the conductive pad and at least contacting the first conductive element, the second conductive element electrically connecting the conductive pad and the first conductive element.

A method of forming a stacked microelectronic assembly comprising the steps of:

• (a) juxtaposing a first electrically conductive element overlying a major surface of a first semiconductor element with an electrically conductive pad exposed at a front surface of a second semiconductor element;
• (b) forming an opening extending through the conductive pad of the second semiconductor element and through the first conductive element, wherein forming an opening includes forming a first opening extending from a major surface of the second semiconductor element towards the front surface thereof, and a second opening extending from the first opening through the conductive pad and the first conductive element wherein where the first and second openings meet, interior surfaces of the first and second openings extend at different angles relative to the major surface of the second semiconductor element;
• and
• (c) forming a second electrically conductive element through the conductive pad, the second conductive element extending at least within the opening and through a thickness of the second semiconductor element, the second conductive element electrically contacting the conductive pad and the first conductive element.

A method of forming a stacked microelectronic assembly comprising the steps of:

• (a) juxtaposing a first electrically conductive element overlying a major surface of a first semiconductor element with an electrically conductive pad exposed at a front surface of a second semiconductor element, wherein the second semiconductor element includes a first opening extending from a rear surface of the second semiconductor element towards a front surface thereof, the first opening being at least partially aligned with the conductive pad;
• (b) forming a second opening extending from the first opening of the second semiconductor element through the conductive pad and through the first conductive element;
• and
• (c) forming a second electrically conductive element extending through the first and second openings, the conductive pad and the first conductive element, the second conductive element electrically connecting the conductive pad and the first conductive element.

An assembly, comprising:

• a first semiconductor element having a first conductive element exposed at a major surface thereof;
• a second semiconductor element having a front surface juxtaposed with the major surface of the first semiconductor element, a plurality of active semiconductor devices therein, and a conductive pad exposed at the front surface thereof, the conductive pad at least partly overlying the first conductive element, the second semiconductor element including an opening extending from a major surface thereof through the conductive pad and exposing the first conductive element;
• and
• a first metal element extending within the opening, through a thickness of the second semiconductor element, and through the conductive pad, the first metal element electrically interconnecting the conductive pad with the conductive element,
• wherein the opening of the second semiconductor element includes a first opening extending from a major surface of the second semiconductor element towards the front surface thereof, and a second opening extending from the first opening through the conductive pad, wherein where the first and second openings meet, interior surfaces of the first and second openings extend at different angles relative to the major surface of the second semiconductor element.

An assembly, comprising:

• a first semiconductor element having a first conductive element exposed at a major surface thereof;
• a second semiconductor element having a front surface juxtaposed with the major surface of the first semiconductor element, a plurality of active semiconductor devices therein, and a conductive pad exposed at the front surface thereof, the conductive pad at least partly overlying the first conductive element, the second semiconductor element including an opening extending from a major surface thereof through the conductive pad and the first conductive element;
• and
• a first metal element extending within the opening, through a thickness of the second semiconductor element, and through the conductive pad, the first metal element electrically interconnecting the conductive pad with the conductive element,
• wherein the opening of the second semiconductor element includes a first opening extending from a major surface of the second semiconductor element towards the front surface thereof, and a second opening extending from the first opening through the conductive pad, wherein where the first and second openings meet, interior surfaces of the first and second openings extend at different angles relative to the major surface of the second semiconductor element.