Layer stacks and integrated circuit arrangements
AssigneeInfineon Technologies AG
InventorsTobias Schmidt, Evelyn Napetschnig, Franz Stueckler, Anton Pugatschow
Life of this patent
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Abstract
In various embodiments, a layer stack is provided. The layer stack may include a carrier; a first metal disposed over the carrier; a second metal disposed over the first metal; and a solder material disposed above the second metal or a material that provides contact to a solder that is supplied by an external source. The second metal may have a melting temperature of at least 1800° C. and is not or substantially not dissolved in the solder material at least one of during a soldering process and after the soldering process.
Claims26
A layer stack, comprising:
- a carrier;
- a first metal disposed over the carrier;
- a second metal disposed over the first metal;
- and
- a solder material disposed over the second metal, or a material that provides contact to a solder that is supplied by an external source;
- wherein the second metal has a melting temperature of at least 1800° C. and is an adhesive layer to the solder material and may substantially not be dissolved in the solder material during a soldering process.
A layer stack, comprising:
- a carrier;
- a metal layer disposed over the carrier;
- a solder stop layer disposed over the metal layer;
- and
- a solder alloying layer configured to alloy with a solder material during a soldering process;
- a solder material disposed over the solder alloying layer, or a material that provides contact to a solder material that is supplied by an external source;
- wherein the solder stop layer has a melting temperature of at least 1800° C. and is not or substantially not dissolved in the solder material at least one of during and after a soldering process.
An integrated circuit arrangement, comprising:
- an integrated circuit comprising an integrated circuit contact;
- a metallization layer stack coupled to the integrated circuit contact, the metallization layer stack comprising:
- a first metal disposed over the integrated circuit contact;
- a second metal disposed over the first metal;
- and
- a solder material disposed above the second metal, or a material that provides contact to a solder that is supplied by an external source;
- wherein the second metal has a melting temperature of at least 1800° C. and is not or substantially not dissolved in the solder material at least one of during a soldering process and after the soldering process.
An integrated circuit arrangement, comprising:
- an integrated circuit comprising an integrated circuit contact;
- a metallization layer stack coupled to the integrated circuit contact, the metallization layer stack comprising:
- a carrier;
- a metal layer disposed over the carrier;
- a solder stop layer disposed over the metal layer;
- and
- a solder alloying layer configured to alloy with a solder material during a soldering process, or a material that provides contact to a solder that is supplied by an external source;
- a solder material disposed above the solder alloying layer;
- wherein the metal layer has a melting temperature of at least 1800° C. and is not or substantially not dissolved in the solder material at least one of during a soldering process and after the soldering process.
Dependencies are inferred from the claim text.