Semiconductor device and method for manufacturing the same
OwnerMakoto Honda, Masayuki Kitamurainventors
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Abstract
According to one embodiment, a semiconductor device includes a semiconductor substrate, an interlayer dielectric film, a contact hole, a contact plug and a nickel silicide film. The semiconductor substrate includes silicon. The interlayer dielectric film is formed on the semiconductor substrate. The contact hole is formed in the interlayer dielectric film. A contact plug is formed within the contact hole. A nickel silicide film is formed on a bottom part of the contact hole and electrically connected to the contact plug. A position of an interface between the nickel silicide and the contact plug is higher than a position of an interface between the semiconductor substrate and the interlayer dielectric film.
Claims20
A semiconductor device comprising:
- a semiconductor substrate comprising silicon;
- an interlayer dielectric film on the semiconductor substrate;
- a contact hole in the interlayer dielectric film;
- a contact plug within the contact hole;
- and
- a nickel silicide film on a bottom part of the contact hole and electrically connected to the contact plug,
- wherein a position of an interface between the nickel silicide and the contact plug is higher than a position of an interface between the semiconductor substrate and the interlayer dielectric film.
A method for manufacturing a semiconductor device, the method comprising:
- forming an interlayer dielectric film on a semiconductor substrate comprising silicon;
- forming a contact hole in the interlayer dielectric film;
- forming a nickel film on a side part and a bottom part of the contact hole;
- performing heat treatment to cause an upper part of the semiconductor substrate and the bottom part to be silicidized to form a nickel silicide film on the bottom part of the contact hole;
- and
- embedding a conducting material into the contact hole to form a contact plug.
Dependencies are inferred from the claim text.