Semiconductor device and manufacturing method thereof
AssigneeKabushiki Kaisha Toshiba
InventorsTatsuo MIGITA, Hirokazu Ezawa, Soichi Yamashita
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Abstract
Semiconductor devices of embodiments include a plurality of solder bumps electrically connected on a plurality of electrode pads disposed on a semiconductor substrate in parallel at a pitch of 40 μm or less via under bump metals. The ratio of the diameter (the top diameter) of the portion of each solder bump most away from the semiconductor substrate and the diameter (the bottom diameter) of the bottom side of each solder bump is 1:1 to 1:4.
Claims20
A semiconductor device comprising a plurality of solder bumps electrically connected on a plurality of electrode pads disposed on a semiconductor substrate in parallel at a pitch of 40 μm or less via under bump metals, wherein the ratio of the diameter (the top diameter) of the portion of each solder bump most away from the semiconductor substrate and the diameter (the bottom diameter) of the bottom side of each solder bump is 1:1 to 1:4.
A semiconductor device comprising a plurality of solder bumps electrically connected on a plurality of electrode pads disposed on a semiconductor substrate in parallel at a pitch of 40 μm or less via under bump metals, wherein the angle between a bottom side and a side surface of each solder bump with respect to a side of each solder bump is 45° to 90°.
A manufacturing method of a semiconductor device comprising:
- forming a resist film on a semiconductor substrate having a plurality of electrode pads formed on the semiconductor substrate at a pitch of 40 μm or less and under bump metals laminated on the electrode pads;
- and
- performing exposure to the surface of the resist film at a first focus value larger than a focus value at which a straight shape is exposed to the surface of the resist film in a vertical direction.
Dependencies are inferred from the claim text.