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US 2012/0068325 A1Published application
Substrate bonding with metal germanium silicon material
AssigneeFreescale Semiconductor, Inc.
InventorsRuben B. Montez, Alex P. Pamatat
Life of this patent
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Abstract
In one embodiment, a semiconductor structure including a first substrate, a semiconductor device on the first substrate, a second substrate, and a conductive bond between the first substrate and the second substrate that surrounds the semiconductor device to seal the semiconductor device between the first substrate and the second substrate. The conductive bond comprises metal, silicon, and germanium. A percentage by atomic weight of silicon in the conductive bond is greater than 5%.
Claims21
1-19. (canceled)
A semiconductor structure, comprising:
- a first substrate;
- a semiconductor device on the first substrate,
- a second substrate;
- a conductive bond between the first substrate and the second substrate that surrounds the semiconductor device to seal the semiconductor device between the first substrate and the second substrate, wherein:
- the conductive bond comprises metal, silicon, and germanium;
- and
- a percentage by atomic weight of silicon in the conductive bond is greater than 5%.
4 more elements
A semiconductor structure, comprising:
- a first substrate;
- a micro electromechanical system (MEMS) device on the first substrate,
- a second substrate;
- a conductive bond between the first substrate and the second substrate that surrounds the MEMS device to hermetically seal the MEMS device between the first substrate and the second substrate, wherein:
- the conductive bond is characterized as a eutectic compound that includes aluminum, germanium, and silicon, and a percentage by atomic weight of silicon in the conductive bond is greater than 5%.
2 more elements
Dependencies are inferred from the claim text.