Semiconductor device
AssigneeON Semiconductor Trading, Ltd.
InventorsYuichi WATANABE, Akira YAMANE, Yasuo OISHIBASHI
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Abstract
The invention enhances resistance to a surge in a semiconductor device having a semiconductor die mounted on a lead frame. An N type embedded layer, an epitaxial layer and a P type semiconductor layer are disposed on the front surface of a P type semiconductor substrate forming an IC die. A metal thin film is disposed on the back surface of the semiconductor substrate, and a conductive paste containing silver particles and so on is disposed between the metal thin film and a metal island. When a surge is applied to a pad electrode disposed on the front surface of the semiconductor layer, the surge current flowing from the semiconductor layer into the semiconductor substrate runs toward the metal island through the metal thin film.
Claims6
A semiconductor die comprising:
- a semiconductor substrate of a first conductive type;
- a first semiconductor layer of a second conductive type disposed on a front surface of the semiconductor substrate;
- a second semiconductor layer of the first conductive type disposed on the first semiconductor layer;
- a first electrode and a second electrode that are in contact with the second semiconductor layer so that a current runs between the two electrodes through the second semiconductor layer under a normal input current condition;
- and
- a metal film disposed on a back surface of the semiconductor substrate so as to be in a direct physical contact with the back surface,
- wherein the semiconductor die is bonded to an island of a lead frame by a conductive paste so that the metal film is attached to the island through the conductive paste, and
- the semiconductor substrate and the first and second semiconductor layers are configured to operate as a parasitic bipolar transistor so as to release an input current to the island under a surge event.
Dependencies are inferred from the claim text.