Semiconductor substrate, method for manufacturing semiconductor substrate, semiconductor device, and method for manufacturing semiconductor device
AssigneeMitsumi Electric Co., Ltd.
InventorMitsuharu Yamazaki
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Abstract
A semiconductor substrate having a semiconductor device formable area, wherein a reinforcing part, which is thicker than the semiconductor device formable area and has a top part of which surface is flat, is formed on an outer circumference part of the semiconductor substrate, and an inner side surface connecting the top part of the reinforcing part and the semiconductor device formable area has a cross-sectional shape of which inner diameter becomes smaller as being closer to the semiconductor device formable area.
Claims20
A semiconductor substrate having a semiconductor device formable area, wherein a reinforcing part, which is thicker than said semiconductor device formable area and has a top part of which surface is flat, is formed on an outer circumference part of the semiconductor substrate, and an inner side surface connecting said top part of the reinforcing part and said semiconductor device formable area has a cross-sectional shape of which inner diameter becomes smaller in proportion to its closeness to said semiconductor device formable area.
A manufacturing method of a semiconductor substrate including a semiconductor device formable area and a reinforcing part in an outer circumference part surrounding the semiconductor device formable area, the reinforcing part being thicker than the semiconductor device formable area, comprising:
- a step of preparing a semiconductor substrate to be reinforced including said semiconductor device formable area, an oxidation film being formed on a surface of the semiconductor substrate to be reinforced;
- a positioning step of overlapping a reinforcing ring on a surface of said semiconductor substrate to be reinforced so that an outer circumference shape of the reinforcing ring is coincident with the surface of said semiconductor substrate to be reinforced, the reinforcing ring having the outer circumference shape coincident with the semiconductor substrate to be reinforced, an opening being formed at a position covering said semiconductor device formable area, an oxidation film being formed on a bottom surface;
- and
- a laminating step of joining said oxidation films to each other by performing heat treatment.
A semiconductor device formed in a semiconductor device formable area of a semiconductor substrate, wherein a reinforcing part, which is thicker than said semiconductor device formable area and has a top part of which surface is flat, is formed on an outer circumference part of one surface of said semiconductor substrate, and diffusion layers are formed on both surfaces of said semiconductor device formable area.
A manufacturing method of a semiconductor device, comprising:
- a first diffusion layer forming step of forming a first diffusion layer by implanting ions into a first surface of a semiconductor substrate;
- a concave shape forming step of fo uing a concave shape on a second surface of said semiconductor substrate, a central part of said semiconductor substrate in the concave shape having a thickness smaller than an outer circumference part;
- and
- a concave part processing step of forming a second diffusion layer and a gate on a surface of a concave part, which is a recessed portion of said concave shape.
Dependencies are inferred from the claim text.