Transistor and Method of Manufacturing a Transistor
AssigneeInfineon Technologies AG
InventorKlaus Diefenbeck
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Abstract
In accordance with an embodiment of the present invention a transistor is disclosed. The transistor comprises a collector, a base and an emitter, wherein a first end width of the base is larger than a middle width of the base, wherein a first end width of the collector is larger than a middle width of the collector, or wherein a first end width of the emitter is larger than a middle width of the emitter.
Claims20
A transistor comprising:
- a base;
- an emitter;
- and
- a collector, wherein a first end width of the base is larger than a middle width of the base, wherein a first end width of the collector is larger than a middle width of the collector, or wherein a first end width of the emitter is larger than a middle width of the emitter.
A method for making a transistor, the method comprising:
- forming a semiconductive material layer over a substrate;
- forming a first photoresist over the semiconductive material layer, the first photoresist comprising a first barbell shaped opening;
- and
- forming a first region by implanting dopants from a first conductivity type into the semiconductive material through the opening.
A method for manufacturing a semiconductor device, the method comprising:
- forming a collector region in a first semiconductive material;
- forming a base region in a second semiconductive material over the first semiconductive material;
- and
- forming an emitter region in the second semiconductive material adjacent the base region, wherein the base region comprises a first end region width and an inner region width, and wherein the first end region width is wider than the inner region width.
A method for manufacturing a semiconductor device, the method comprising:
- forming a first semiconductive material over a substrate;
- forming a second semiconductive material over the first semiconductive material;
- forming an opening in the second semiconductive material, the opening comprising a barbell shape;
- and
- implanting dopants into the first semiconductive material using the opening.
Dependencies are inferred from the claim text.