Semiconductor Device Comprising a Metal System Including a Separate Inductor Metal Layer
AssigneeX-Fab Semiconductor Foundries AG
InventorsTsui Ping Chu, Hyung Sun Yook, Poh Ching Sim
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Abstract
In an integrated circuit an inductor metal layer is provided separately to the top metal layer, which includes the power and signal routing metal lines. Consequently, high performance inductors can be provided, for instance by using a moderately high metal thickness substantially without requiring significant modifications of the remaining metallization system.
Claims18
An integrated circuit comprising a plurality of semiconductor circuit elements formed in and above a semiconductor layer formed above a substrate, and further having:
- one or more first metal layers formed above said semiconductor layer, said one or more metal layers comprising metal lines having a first thickness;
- a second metal layer formed above said one or more first metal layers, said second metal layer comprising power and signal routing lines having a second thickness that is greater than said first thickness;
- and
- one or more inductor metal layers formed above said semiconductor layer, said one or more inductor metal layers comprising inductor metal lines forming one or more inductors, said inductor metal lines having a third thickness that is greater than said second thickness.
A method of forming a metallization system of an integrated circuit, the method comprising:
- forming a metal layer above a substrate, said metal layer comprising power and signal routing metal lines having a specified thickness;
- and
- forming an inductor metal layer above said substrate, said inductor metal layer including inductor metal lines having a thickness that is greater than said specified thickness.
Dependencies are inferred from the claim text.