Semiconductor device having super junction structure and method for manufacturing the same
AssigneeDenso Corporation
InventorTakeshi MIYAJIMA
Life of this patent
Estimating the term…
Abstract
A semiconductor device having a super junction structure includes: multiple first columns extending in a current flowing direction; and multiple second columns extending in the current flowing direction. The first and second columns are alternately arranged in an alternating direction. Each first column provides a drift layer. The first and second columns have a boundary therebetween, from which a depletion layer expands in case of an off-state. At least one of the first columns and the second columns have an impurity dose, which is inhomogeneous by location with respect to the alternating direction.
Claims11
A semiconductor device having a super junction structure comprising:
- a plurality of first columns having a first conductive type and extending in a current flowing direction;
- and
- a plurality of second columns having a second conductive type and extending in the current flowing direction, wherein
- the first columns and the second columns are alternately arranged in an alternating direction perpendicular to the current flowing direction so that the super junction structure is provided,
- each first column provides a drift layer in case of an on-state for flowing a current therethrough,
- the first columns and the second columns have a boundary between the first column and the second column, from which a depletion layer expands in case of an off-state, and
- at least one of the first columns and the second columns have an impurity dose, which is inhomogeneous by location with respect to the alternating direction.
(canceled)
4-5. (canceled)
10-14. (canceled)
A method for manufacturing a semiconductor device having a super junction structure, the method comprising:
- preparing a semiconductor substrate having a first conductive type;
- forming a plurality of trenches in the substrate, wherein each trench has a constant width along with a first direction, and wherein a distance between neighboring two trenches along with the first direction includes at least a first distance and a second distance;
- forming an epitaxial film having a second conductive type on the substrate so that the trenches are filled with the epitaxial film;
- and
- flattening one side of the substrate, on which the epitaxial film is formed.
16-24. (canceled)
Dependencies are inferred from the claim text.