Semiconductor device

A semiconductor device comprising:

• a main element domain;
• and
• a sense element domain disposed adjacent to the main element domain;
• wherein
• each of the main element domain and the sense element domain comprises a first semiconductor layer, a second semiconductor layer laminated on the first semiconductor layer, and a third semiconductor layer laminated on the second semiconductor layer, and
• an impurity concentration of the second semiconductor layer is lower than that of the first semiconductor layer,
• wherein when the semiconductor device turns on, a channel is formed in each of the third semiconductor layers of the main element domain and the sense element domain, and current flows from the second semiconductor layer to the third semiconductor layer or from the third semiconductor layer to the second semiconductor layer, and
• at least an impurity concentration of the third semiconductor layer of the sense element domain is lower than that of the third semiconductor layer of the main element domain.

A semiconductor device comprising:

• a main element domain;
• and
• a sense element domain disposed adjacent to the main element domain;
• wherein
• each of the main element domain and the sense element domain comprises a first semiconductor layer, a second semiconductor layer laminated on the first semiconductor layer, and a third semiconductor layer laminated on the second semiconductor layer, and
• an impurity concentration of the second semiconductor layer is lower than that of the first semiconductor layer,
• wherein when the semiconductor device turns on, a channel is formed in each of the third semiconductor layers of the main element domain and the sense element domain, and current flows from the second semiconductor layer to the third semiconductor layer or from the third semiconductor layer to the second semiconductor layer, and
• at least a thickness of the third semiconductor layer of the sense element domain is smaller than that of the third semiconductor layer of the main element domain.

A semiconductor device comprising:

• a main element domain;
• and
• a sense element domain disposed adjacent to the main element domain;
• wherein
• each of the main element domain and the sense element domain comprises a first semiconductor layer, a second semiconductor layer laminated on the first semiconductor layer, and a third semiconductor layer laminated on the second semiconductor layer, and
• an impurity concentration of the second semiconductor layer is lower than that of the first semiconductor layer,
• wherein when the semiconductor device turns on, a channel is formed in each of the third semiconductor layers of the main element domain and the sense element domain, and current flows from the second semiconductor layer to the third semiconductor layer or from the third semiconductor layer to the second semiconductor layer, and
• at least a thickness of the second semiconductor layer of the sense element domain is smaller than that of the second semiconductor layer of the main element domain.