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US 2012/0068293 A1Published application
Semiconductor device having image sensor
AssigneeKabushiki Kaisha Toshiba
InventorHidetoshi KOIKE
Life of this patent
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Abstract
A pixel area for generating an image signal corresponding to incident light is formed on a semiconductor substrate. A light-shielding layer is formed on the semiconductor substrate around the pixel area. The light-shielding layer has a slit near the pixel area and shields the incident light. A passivation film is formed in the pixel area, on the light-shielding layer, and in the slit. A coating layer is formed in the slit of the light-shielding layer and on the passivation film in the pixel area. Microlenses are formed on the coating layer in the pixel area.
Claims5
A semiconductor device comprising:
- a pixel area which is formed on a semiconductor substrate, the pixel area generating an image signal corresponding to incident light;
- a first light-shielding layer which is formed on the semiconductor substrate to surround the pixel area, the first light-shielding layer shielding the incident light;
- a second light-shielding layer which is spaced apart from the first light-shielding layer and formed on the semiconductor substrate to surround the first light-shielding layer, the second light-shielding layer shielding the incident light;
- a passivation film which is formed in the pixel area, on the first light-shielding layer, on the second light-shielding layer, and between the first light-shielding layer and the second light-shielding layer;
- a coating layer which is formed on the passivation film between the first light-shielding layer and the second light-shielding layer and on the passivation film in the pixel area;
- and
- microlenses which are formed on the coating layer in the pixel area.
4 more elements
Dependencies are inferred from the claim text.