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US 2012/0068290 A1Published application
Semiconductor device manufacturing method, semiconductor device, and camera module
AssigneeKabushiki Kaisha Toshiba
InventorsTakashi Shirono, Kazumasa Tanida, Naoko Yamaguchi, Satoshi Hongo, Tsuyoshi Matsumura
Life of this patent
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Abstract
According to one embodiment, an insulation film is formed over the surface, backside, and sides of a first substrate. Next, the insulation film formed over the surface of the first substrate is removed. Then, a joining layer is formed over the surface of the first substrate, from which the insulation film has been removed. Subsequently, the first substrate is bonded to a second substrate via a joining layer.
Claims20
A semiconductor manufacturing method comprising:
- forming an insulation film over a surface, backside, and sides of a first substrate;
- forming a joining layer over the surface of the first substrate;
- and
- bonding the first substrate to a second substrate via the joining layer.
1 more element
A semiconductor device comprising:
- a first substrate;
- an insulation film formed over the first substrate;
- a joining layer formed over the insulation film;
- and
- a second substrate bonded to the first substrate via the joining layer.
2 more elements
A camera module comprising:
- a semiconductor device with an imaging element;
- and
- a lens module configured such that light from outside is made incident to the imaging element,
- wherein the semiconductor device includes:
- a first substrate;
- an insulation film formed over the first substrate;
- a joining layer formed over the insulation film;
- and
- a second substrate bonded to the first substrate via the joining layer.
6 more elements
Dependencies are inferred from the claim text.